Advanced electrical simulation of thin film solar cells
Identifieur interne : 001173 ( Main/Repository ); précédent : 001172; suivant : 001174Advanced electrical simulation of thin film solar cells
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Abstract
Advanced electrical simulation of copper indium gallium diselenide solar cells is illustrated by setting up a demonstration case in SCAPS (Solar Cell Capacitance Simulator), the solar cell simulation programme of the University of Gent. The model includes band gap grading, multivalent defects and metastable transitions between defects. This simplified demonstration model clearly and quantitatively illustrates some topics that were extensively discussed in recent literature: metastable defects exist in either an acceptor or in a donor configuration; the occupation of these configurations is set during initial conditions at higher temperature, and then frozen in during cell operation at lower temperature. These occupations can strongly influence the effective doping profile in the absorber, and hence possible energy barriers in the structure. The dependence of such barriers on the initial conditions and on the operating voltage can cause a considerable dependence of the current-voltage characteristics on the initial conditions, especially of the fill factor. At the same time, the demonstration model illustrates some of the recent extensions of SCAPS. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Advanced electrical simulation of thin film solar cells</title><author><name sortKey="Burgelman, Marc" uniqKey="Burgelman M">Marc Burgelman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>9000 Gent</wicri:noRegion></affiliation></author><author><name sortKey="Decock, Koen" uniqKey="Decock K">Koen Decock</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>9000 Gent</wicri:noRegion></affiliation></author><author><name sortKey="Khelifi, Samira" uniqKey="Khelifi S">Samira Khelifi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>9000 Gent</wicri:noRegion></affiliation></author><author><name sortKey="Abass, Aimi" uniqKey="Abass A">Aimi Abass</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>9000 Gent</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229207</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229207 INIST</idno><idno type="RBID">Pascal:13-0229207</idno><idno type="wicri:Area/Main/Corpus">000B17</idno><idno type="wicri:Area/Main/Repository">001173</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Capacitance</term><term>Copper Indium Selenides Mixed</term><term>Doping profile</term><term>Electronic properties</term><term>Energy barrier</term><term>Energy gap</term><term>Gallium</term><term>Metastable state</term><term>Numerical simulation</term><term>Solar cell</term><term>Theoretical study</term><term>Thin film device</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Simulation numérique</term><term>Dispositif couche mince</term><term>Cellule solaire</term><term>Capacité électrique</term><term>Bande interdite</term><term>Propriété électronique</term><term>Etat métastable</term><term>Profil dopage</term><term>Barrière énergie</term><term>Caractéristique courant tension</term><term>Etude théorique</term><term>Cuivre Indium Séléniure Mixte</term><term>Gallium</term><term>CaSe</term><term>8460J</term><term>7320</term><term>7361</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Advanced electrical simulation of copper indium gallium diselenide solar cells is illustrated by setting up a demonstration case in SCAPS (Solar Cell Capacitance Simulator), the solar cell simulation programme of the University of Gent. The model includes band gap grading, multivalent defects and metastable transitions between defects. This simplified demonstration model clearly and quantitatively illustrates some topics that were extensively discussed in recent literature: metastable defects exist in either an acceptor or in a donor configuration; the occupation of these configurations is set during initial conditions at higher temperature, and then frozen in during cell operation at lower temperature. These occupations can strongly influence the effective doping profile in the absorber, and hence possible energy barriers in the structure. The dependence of such barriers on the initial conditions and on the operating voltage can cause a considerable dependence of the current-voltage characteristics on the initial conditions, especially of the fill factor. At the same time, the demonstration model illustrates some of the recent extensions of SCAPS. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Advanced electrical simulation of thin film solar cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>BURGELMAN (Marc)</s1></fA11><fA11 i1="02" i2="1"><s1>DECOCK (Koen)</s1></fA11><fA11 i1="03" i2="1"><s1>KHELIFI (Samira)</s1></fA11><fA11 i1="04" i2="1"><s1>ABASS (Aimi)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>University of Gent, Electronics and Information Systems (ELIS), Pietersnieuwstraat 41</s1><s2>9000 Gent</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>296-301</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550650</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229207</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Advanced electrical simulation of copper indium gallium diselenide solar cells is illustrated by setting up a demonstration case in SCAPS (Solar Cell Capacitance Simulator), the solar cell simulation programme of the University of Gent. The model includes band gap grading, multivalent defects and metastable transitions between defects. This simplified demonstration model clearly and quantitatively illustrates some topics that were extensively discussed in recent literature: metastable defects exist in either an acceptor or in a donor configuration; the occupation of these configurations is set during initial conditions at higher temperature, and then frozen in during cell operation at lower temperature. These occupations can strongly influence the effective doping profile in the absorber, and hence possible energy barriers in the structure. The dependence of such barriers on the initial conditions and on the operating voltage can cause a considerable dependence of the current-voltage characteristics on the initial conditions, especially of the fill factor. At the same time, the demonstration model illustrates some of the recent extensions of SCAPS. .</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dispositif couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thin film device</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Dispositivo capa delgada</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Célula solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Capacité électrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Capacitance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Capacitancia</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Bande interdite</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Energy gap</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Banda prohibida</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Electronic properties</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Etat métastable</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Metastable state</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Estado metastable</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Profil dopage</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Doping profile</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Perfil doping</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Barrière énergie</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Energy barrier</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Barrera energía</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Etude théorique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Theoretical study</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Estudio teórico</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cobre Indio Seleniuro Mixto</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Galio</s0><s2>NC</s2><s2>FX</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>CaSe</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>7320</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>7361</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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